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LPT 80 A
NPN-Silizium-Fototransistor Silicon NPN Phototransistor
LPT 80 A
16.51 16.00 1.52
2.54mm spacing
5.84 5.59 1.52
1.29 1.14
4.57 4.32
2.54 2.03
2.34 2.08
Collector
1.52 Plastic marking
1.70 1.45
GEO06391
0.64 0.46
0.64 0.46
R = 0.76
feo06391
Approx. weight 0.2 g
Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified
Wesentliche Merkmale q Speziell geeignet fur Anwendungen im Bereich von 470 nm bis 1080 nm q Sidelooker im Kunststoffgehause q Hohe Empfindlichkeit q Passend zu IRED IRL 80 A, IRL 81 A Anwendungen q Fertigungs- und Kontrollanwendungen der Industrie q Lichtschranken Typ Type LPT 80 A Bestellnummer Ordering Code Q68000-A7852 Gehause Package
Features q Especially suitable for applications from 470 nm to 1080 nm q Sidelooker in plastic package q High sensitivity q Matches IR emitter IRL 80 A, IRL 81 A Applications q A variety of manufacturing and monitoring applications q Photointerrupters
Klares Kunststoffgehause, Lotspiee im 2.54-mm-Raster (1/10"), Kollektorkennzeichnung: Langerer Lotspie Clear plastic miniature package, 2.54 mm (1/10") lead spacing, collector marking: long solder lead
Semiconductor Group
1
1998-11-16
LPT 80 A
Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, =10 s Collector surge current Emitter-Kollektorspannung Emitter-collector voltage Verlustleistung, TA = 25 C Total power dissipation Warmewiderstand Thermal resistance Symbol Symbol Wert Value - 40 ... + 100 30 50 100 7 100 750 Einheit Unit C V mA mA V mW K/W
Top; Tstg VCE IC ICS VEC Ptot RthJA
Semiconductor Group
2
1998-11-16
LPT 80 A
Kennwerte (TA = 25 C, = 950 nm) Characteristics Bezeichnung Description Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S=10% von Smax Spectral range of sensitivity S=10% of Smax Abmessung der Chip-Flache Dimensions of chip area Halbwinkel Half angle Kapaziat, VCE = 5 V, f = 1 MHz, E = 0 Capacitance Dunkelstrom, VCE = 5 V Dark current Symbol Symbol S max Wert Value 850 430 ... 1070 Einheit Unit nm nm
LxB LxW
0.55 x 0.55 35 3.3 3 (< 50)
mm x mm Grad deg. pF nA
CCE IR
Bezeichnung Description
Symbol Symbol
Wert Value
Einheit Unit mA
Fotostrom Photocurrent Ee = 0.5 mW/cm2, VCE = 5 V, IPCE = 950 nm Ev = 1000 lx, Normlicht/standard light A, VCE = 5 V IPCE Anstiegs- und Abfallzeit Rise and fall time RL = 1 k, V = 5 V, =950 nm, IC = 1 mA Kollektor-Emitter-Sattigungsspannung Collector-emitter saturation voltage IC = IPCE min x 0.8, Ee = 0.5 mW/cm2
> 0.25 3.2 10 s
tr, tf
VCEsat
150
mV
Semiconductor Group
3
1998-11-16
LPT 80 A
Relative spectral sensitivity Srel = f ()
100
OHF01420
Photocurrent IPCE = f (Ee) , VCE = 5 V
PCE
10 1 mA
OHFD1422
Total power dissipation Ptot = f (TA)
125
OHR01425
S rel %
80 70 60 50 40 30 20 10 0 400 500 600 700 800 900 nm 1100
F mA
100
10 0 L K J H
75
10
-1
50
10 -2
25
10 -3 -3 10
10 -2
10 -1 mW/cm 2 10 0 Ee
0 0 20 40 60 80 C 100
TA
Photocurrent IPCE / IPCE25= f (TA), VCE = 5 V
PCE 25
1.4
Dark current ICE0= f (TA), VCE = 5 V, E = 0
CE0
10 4 nA 10 3
OHF00343
Capacitance CCE = f (VCE), f = 1 MHz, E = 0
CCE
8 pF 7 6
OHF00344
PCE
1.6
OHF01524
1.2 1.0 0.8 0.6 0.4 0.2 0 -25
10 2
5 4
10
1
3 2 1
10 0
0
25
50
75 C 100 TA
10 -1
0
25
50
75
C 100 TA
0 -2 10
10 -1
10 0
10 1
V 10 2 V CE
Dark current ICE0= f (VCE), E = 0
R
10 1 nA
OHF00342
Directional characteristics Srel = f ()
40 30 20
10
0 1.0
OHF00345
50 0.8
10 0
60
0.6
70
10
-1
0.4
80 90
10 -2 0 10 20 30 V V CE
0.2 0
100
1.0
0.8
0.6
0.4
0
20
40
60
80
100
120
Semiconductor Group
4
1998-11-16

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